The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Apr. 28, 2008
Kyoung-seok Son, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Kyoung-seok Son, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Abstract
A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.