The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Nov. 28, 2007
Applicants:
Eric Enebakk, Kristiansand, NO;
Kristian Peter, Constance, DE;
Bernd Raabe, Constance, DE;
Ragnar Tronstad, Sogne, NO;
Inventors:
Eric Enebakk, Kristiansand, NO;
Kristian Peter, Constance, DE;
Bernd Raabe, Constance, DE;
Ragnar Tronstad, Sogne, NO;
Assignee:
Elkem Solar AS, Oslo, NO;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.