The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8735196 B1

PDF
Full Text
Expired
Date of Patent:
May. 27, 2014

Filed:

Mar. 02, 2012
Applicant:

Masanobu Ando, Fukuoka-ken, JP;

Inventor:

Masanobu Ando, Fukuoka-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/26 (2010.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, in a method of a nitride semiconductor light emitting device, a nitride semiconductor laminated body is formed on a first substrate having a first size. A first adhesion layer with a second size smaller than the first size is formed on the nitride semiconductor laminated body. A second adhesion layer is formed on a second substrate. The first and the second substrates are bonded while the first and second adhesion layers being overlapped each other. The first substrate is removed so as to generate a recess having a third size equal to or larger than the second size. The first substrate is etched until exposing the nitride semiconductor laminated body while injecting a chemical solution into the recess. The exposed nitride semiconductor laminated body is etched using the chemical solution so as to form a concave-convex portion in the exposed nitride semiconductor laminated body.


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