The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jan. 20, 2006
Jeo-young Shim, Yongin-si, KR;
Su-hyeon Kim, Yongin-si, KR;
Kyu-tae Yoo, Seoul, KR;
Sung-ouk Jung, Suwon-si, KR;
Joon-shik Park, Yongin-si, KR;
Jeo-young Shim, Yongin-si, KR;
Su-hyeon Kim, Yongin-si, KR;
Kyu-tae Yoo, Seoul, KR;
Sung-ouk Jung, Suwon-si, KR;
Joon-shik Park, Yongin-si, KR;
Abstract
Provided is a field effect transistor (FET) type biosensor including a source electrode, a gate, and a drain electrode. A ligand that can bind to a side of a nucleic acid is added to the surface of the gate. In a conventional FET type biosensor, it is difficult to detect a signal within the debye length because a target nucleic acid is directly fixed to the surface of a gate of the conventional FET. However, in the present invention, this problem can be overcome and the debye length can be increased by treating the surface of a gate of an FET sensor with a ligand that can bind to a side of a nucleic acid. The ligand can be adsorbed onto the surface of the gate. In this case, the nucleic acid is adsorbed parallel to the surface of the gate, not perpendicular to the surface of the gate, thus generating an effective depletion region. In addition, hybridization efficiency can be increased because a hybridized sample can be injected into an FET sensor at high ionic strength.