The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Dec. 29, 2011
Sung-min Hong, Pleasanton, CA (US);
Tae-kyung Kim, Palo Alto, CA (US);
Woosung Choi, Pleasanton, CA (US);
Sung-Min Hong, Pleasanton, CA (US);
Tae-Kyung Kim, Palo Alto, CA (US);
Woosung Choi, Pleasanton, CA (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A non-volatile semiconductor memory device comprises a semiconductor substrate and a plurality of gate structures formed on a cell region of the semiconductor substrate. The plurality of gate structures include: a first select-gate structure and a second select-gate structure disposed on the cell region, the first select-gate structure and the second select-gate structure spaced apart from each other, and a plurality of cell gate structures disposed between the first select-gate structure and the second select-gate structure. At least one of the select-gate structures comprises plural select gates.