The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Aug. 16, 2012
Applicants:

Xiaomin Yang, Longwood, FL (US);

James P. Furino, Jr., Melbourne, FL (US);

Inventors:

Xiaomin Yang, Longwood, FL (US);

James P. Furino, Jr., Melbourne, FL (US);

Assignee:

TriQuint Semiconductor, Inc., Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments provide a switching device including one or more field-effect transistors (FETs) and bias circuitry. The one or more FETs may transition between an off state and an on state to facilitate switching of a transmission signal. The one or more FETs may include a drain terminal, a source terminal, a gate terminal, and a body. The biasing circuitry may bias the drain terminal and the source terminal to a first DC voltage in the on state and a second DC voltage in the off state. The first and second DC voltages may be non-negative. The biasing circuitry may be further configured to bias the gate terminal to the first DC voltage in the off state and the second DC voltage in the on state.


Find Patent Forward Citations

Yang, Xiaomin. (2014). Switching device with non-negative biasing (U.S. Patent No. 8729952). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8729952

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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