The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Jul. 30, 2012
Applicant:

Taichi Nishio, Osaka, JP;

Inventor:

Taichi Nishio, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface; a through-hole formed to penetrate the semiconductor substrate from the first surface to the second surface; an insulating film formed on an inner wall of the through-hole; a barrier film formed on the inner wall of the through-hole with the insulating film interposed therebetween; and a conductive portion formed to fill the through-hole provided with the insulating film and the barrier film. A gettering site is formed in a portion of the semiconductor substrate around the through-hole at least near a side of the first surface.


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