The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Oct. 04, 2012
Fujitsu Semiconductor Limited, Yokohama, JP;
Wensheng Wang, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device includes forming an insulating film over a semiconductor substrate, forming a capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode over the insulating film, forming a first protective insulating film over a side surface and upper surface of the capacitor by a sputtering method, and forming a second protective insulating film over the first protective insulating film by an atomic layer deposition method.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile