The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 02, 2012
Chia-ying Liu, Hsinchu, TW;
Keh-chiang Ku, Cupertino, CA (US);
Wu-zhang Yang, Chuang-Huang County, TW;
Chia-Ying Liu, Hsinchu, TW;
Keh-Chiang Ku, Cupertino, CA (US);
Wu-Zhang Yang, Chuang-Huang County, TW;
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.