The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Feb. 06, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Masakazu Goto, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823842 (2013.01); H01L 21/8238 (2013.01); H01L 21/8234 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a gate electrode formed on a substrate with a gate insulation film interposed therebetween, and a source region of a first conductivity type and a drain region of a second conductivity type reverse to the first conductivity type, which are formed so as to hold the gate electrode therebetween within the substrate. The work function of a first region on the source region side within the gate electrode is shifted toward the first conductivity type as compared to the work function of a second region on the drain region side within the gate electrode.