The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Mar. 28, 2012
Applicants:

Toshiya Yokogawa, Nara, JP;

Akira Inoue, Osaka, JP;

Masaki Fujikane, Osaka, JP;

Mitsuaki Oya, Osaka, JP;

Atsushi Yamada, Osaka, JP;

Tadashi Yano, Kyoto, JP;

Inventors:

Toshiya Yokogawa, Nara, JP;

Akira Inoue, Osaka, JP;

Masaki Fujikane, Osaka, JP;

Mitsuaki Oya, Osaka, JP;

Atsushi Yamada, Osaka, JP;

Tadashi Yano, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of dand d, respectively, and emit the polarized light having wavelengths λand λ, respectively, where the inequalities of λand d<dare satisfied.


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