The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jun. 24, 2010
Masaya Okada, Itami, JP;
Makoto Kiyama, Itami, JP;
Masaya Okada, Itami, JP;
Makoto Kiyama, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
There are provided a high current semiconductor device that has low on-resistance, high mobility, and good pinch-off characteristics and in which a kink phenomenon is not easily caused even if a drain voltage is increased, and a method for producing the semiconductor device. The semiconductor device of the present invention includes a GaN-based layered bodyhaving an opening, a regrown layerincluding a channel, a gate electrode G, a source electrode S, and a drain electrode D. The regrown layerincludes an electron transit layerand an electron supply layer. The GaN-based layered body includes a p-type GaN layerwhose end surface is covered by the regrown layer in the opening, and a p-side electrodethat is in ohmic contact with the p-type GaN layer is disposed.