The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 11, 2011
David B. Jackrel, Pacifica, CA (US);
Katherine Dickey, Stanford, CA (US);
Kristin Pollock, San Jose, CA (US);
Jacob Woodruff, Palo Alto, CA (US);
Peter Stone, San Francisco, CA (US);
Gregory Brown, San Jose, CA (US);
David B. Jackrel, Pacifica, CA (US);
Katherine Dickey, Stanford, CA (US);
Kristin Pollock, San Jose, CA (US);
Jacob Woodruff, Palo Alto, CA (US);
Peter Stone, San Francisco, CA (US);
Gregory Brown, San Jose, CA (US);
aeris CAPITAL Sustainable IP Ltd., Grand Cayman, KY;
Abstract
Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy.