The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 25, 2009
Jui-yi Chu, Hsinchu, TW;
Cheng-ta Kuo, Hsinchu, TW;
Yu-pin Hsu, Hsinchu, TW;
Chun-kai Wang, Hsinchu, TW;
Hsin-hsien Wu, Hsinchu, TW;
Yi-chieh Lin, Hsinchu, TW;
Jui-Yi Chu, Hsinchu, TW;
Cheng-Ta Kuo, Hsinchu, TW;
Yu-Pin Hsu, Hsinchu, TW;
Chun-Kai Wang, Hsinchu, TW;
Hsin-Hsien Wu, Hsinchu, TW;
Yi-Chieh Lin, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.