The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jun. 23, 2011
Henry M. Daghighian, Santa Clara, CA (US);
Peter D. Olcott, Stanford, CA (US);
Craig S. Levin, Palo Alto, CA (US);
Farhad Taghibakhsh, Redwood City, CA (US);
Henry M. Daghighian, Santa Clara, CA (US);
Peter D. Olcott, Stanford, CA (US);
Craig S. Levin, Palo Alto, CA (US);
Farhad Taghibakhsh, Redwood City, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Detection of ionizing radiation with modulation doped field effect transistors (MODFETs) is provided. There are two effects which can occur, separately or together. The first effect is a direct effect of ionizing radiation on the mobility of electrons in the 2-D electron gas (2DEG) of the MODFET. An ionizing radiation absorption event in or near the MODFET channel can perturb the 2DEG mobility to cause a measurable effect on the device conductance. The second effect is accumulation of charge generated by ionizing radiation on a buried gate of a MODFET. The conductance of the MODFET can be made sensitive to this accumulated charge, thereby providing detection of ionizing radiation. 1-D or 2-D arrays of MODFET detectors can be employed to provide greater detection area and/or spatial resolution of absorption events. Such detectors or detector pixels can be integrated with electronics, such as front-end amplification circuitry.