The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Mar. 02, 2011
Applicants:
Shigeki Imai, Osaka, JP;
Takafumi Shimatani, Osaka, JP;
Hikaru Kobayashi, Kyoto, JP;
Inventors:
Assignees:
Sharp Kabushiki Kaisha, Osaka-Shi, JP;
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a thin-film transistor () manufacturing method that includes a process for forming a nitrate film () that includes residual nickel () on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (); and a process for removing the nitrate film () that includes residual nickel () from the polysilicon layer () surface. With this surface treatment process, a polysilicon layer () with reduced concentration of a surface residual nickel () is provided, and a thin-film transistor () having excellent surface smoothness is attained.