The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jul. 21, 2011
Applicants:
Sven Beyer, Dresden, DE;
Andreas Hellmich, Dresden, DE;
Steffen Laufer, Dresden, DE;
Klaus Gebauer, Dresden, DE;
Inventors:
Sven Beyer, Dresden, DE;
Andreas Hellmich, Dresden, DE;
Steffen Laufer, Dresden, DE;
Klaus Gebauer, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/28123 (2013.01);
Abstract
When forming complex gate electrode structures, a double exposure double etch strategy may be applied, in which the lateral distance in the width direction of the gate electrode structures may be defined prior to forming mask features for defining the gate length. In this case, the width dimension of the mask opening may be adjusted on the basis of a spacer element, which may thus allow providing a reduced dimension on the basis of well-established process techniques.