The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Feb. 11, 2009
Hans-joachim Krokoszinski, Nussloch, DE;
Jan Lossen, Erfurt, DE;
Hans-Joachim Krokoszinski, Nussloch, DE;
Jan Lossen, Erfurt, DE;
SolarWorld Industries-Thueringen GmbH, Bonn, DE;
Abstract
A method for producing monocrystalline n-silicon solar cells having a rear-side passivated pemitter and rear-side, spatially separate heavily doped n-base regions near the surface, as well as an interdigitated rear-side contact finger structure, which is in conductive connection with the p-emitter regions and the n-base regions. An aluminum thin layer or an aluminum-containing thin layer is first deposited on the rear side of the n-silicon wafer, and the thin layer is subsequently structured so that openings are obtained in the region of the future base contacts. In a further process step, the aluminum is then diffused into the n-silicon wafer in order to form a structured emitter layer.