The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Dec. 29, 2011
Su-young Kim, Gyeonggi-do, KR;
Su-Young Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming a mold layer over a substrate, wherein the mold layer includes a first sacrificial layer and a second sacrificial layer that are stacked, forming an insulation layer pattern that has an etch selectivity to the first sacrificial layer and the second sacrificial layer on the mold layer, etching the mold layer using the insulation layer pattern as an etch barrier to form storage node holes, forming a storage node conductive layer over a substrate structure including the insulation layer pattern and the mold layer that has been etched, performing a storage node isolation process that simultaneously forms storage nodes and forming the insulation layer pattern to a first thickness, and removing the first sacrificial layer and the second sacrificial layer.