The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
May. 10, 2012
Jeong-yeop Lee, Gyeonggi-do, KR;
Hyung-soon Park, Gyeonggi-do, KR;
Young-bang Lee, Gyeonggi-do, KR;
Su-young Kim, Gyeonggi-do, KR;
Jeong-Yeop Lee, Gyeonggi-do, KR;
Hyung-Soon Park, Gyeonggi-do, KR;
Young-Bang Lee, Gyeonggi-do, KR;
Su-Young Kim, Gyeonggi-do, KR;
Hynix Semiconductor, Gyeonggi-do, KR;
Abstract
A method for fabricating a capacitor of a semiconductor device includes sequentially forming an etch-stop layer and a mold layer over a substrate, sequentially forming a support layer and a hard mask pattern over the mold layer, forming a storage node hole by etching the support layer and the mold layer using the hard mask pattern as an etch barrier, forming a barrier layer on the sidewall of the mold layer inside the storage node hole, etching the etch-stop layer under the storage node hole, forming a storage node inside the storage node hole, and removing the hard mask pattern, the mold layer, and the barrier layer.