The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
May. 02, 2012
Thin film transistor, method of manufacturing the same and flat panel display device having the same
Jae-heung Ha, Suwon-si, KR;
Young-woo Song, Suwon-si, KR;
Jong-hyuk Lee, Suwon-si, KR;
Jong-han Jeong, Suwon-si, KR;
Min-kyu Kim, Suwon-si, KR;
Yeon-gon MO, Suwon-si, KR;
Jae-kyeong Jeong, Suwon-si, KR;
Hyun-joong Chung, Suwon-si, KR;
Kwang-suk Kim, Suwon-si, KR;
Hui-won Yang, Suwon-si, KR;
Chaun-gi Choi, Suwon-si, KR;
Jae-Heung Ha, Suwon-si, KR;
Young-Woo Song, Suwon-si, KR;
Jong-Hyuk Lee, Suwon-si, KR;
Jong-Han Jeong, Suwon-si, KR;
Min-Kyu Kim, Suwon-si, KR;
Yeon-Gon Mo, Suwon-si, KR;
Jae-Kyeong Jeong, Suwon-si, KR;
Hyun-Joong Chung, Suwon-si, KR;
Kwang-Suk Kim, Suwon-si, KR;
Hui-Won Yang, Suwon-si, KR;
Chaun-Gi Choi, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.