The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Aug. 12, 2010
Matthew J. Breitwisch, Essex Junction, VT (US);
Eric A. Joseph, White Plains, NY (US);
Chung H. Lam, Peekskill, NY (US);
Hsiang-lan Lung, Dobbs Ferry, NY (US);
Matthew J. Breitwisch, Essex Junction, VT (US);
Eric A. Joseph, White Plains, NY (US);
Chung H. Lam, Peekskill, NY (US);
Hsiang-Lan Lung, Dobbs Ferry, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a first metalization layer (Metal 1) of a semiconductor wafer, and includes a bottom and a sidewall. A sublithographic aperture is formed through the bottom of the non-sublithographic via and extends to a buried conductive material. The sublithographic aperture is filled with a conductive non-phase change material. Furthermore, phase change material is deposited within the non-sublithographic via.