The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jul. 27, 2011
Applicants:
Ho-chul Ji, Yongin-si, KR;
Kyoung Won NA, Seoul, KR;
Kyoung Ho Ha, Seoul, KR;
Pil-kyu Kang, Anyang-si, KR;
Inventors:
Ho-Chul Ji, Yongin-si, KR;
Kyoung Won Na, Seoul, KR;
Kyoung Ho Ha, Seoul, KR;
Pil-Kyu Kang, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.