The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Mar. 26, 2008
Applicants:

Michel Martin, Septeme, FR;

Philippe Maurin-perrier, St Marcellin en Forez, FR;

Olivier Blandenet, Meylan, FR;

Inventors:

Michel Martin, Septeme, FR;

Philippe Maurin-Perrier, St Marcellin en Forez, FR;

Olivier Blandenet, Meylan, FR;

Assignee:

H.E.F., Andrezieux Boutheon, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 9/00 (2006.01); C23C 14/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01); C04B 35/26 (2006.01); C04B 35/64 (2006.01); H01F 1/00 (2006.01); H01J 7/18 (2006.01); H01J 35/20 (2006.01); H01K 1/56 (2006.01); H01B 1/06 (2006.01); H01B 1/24 (2006.01); H01J 37/34 (2006.01); C23C 14/06 (2006.01); C23C 14/08 (2006.01); H01M 6/18 (2006.01); H01M 6/40 (2006.01); H01M 10/0562 (2010.01); H01M 2/14 (2006.01); H01M 10/058 (2010.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); H01J 37/3414 (2013.01); H01J 37/3411 (2013.01); C23C 14/0641 (2013.01); C23C 14/0676 (2013.01); C23C 14/08 (2013.01); H01M 2/145 (2013.01); H01M 6/18 (2013.01); H01M 6/40 (2013.01); H01M 10/0562 (2013.01); H01M 10/058 (2013.01); H01M 2300/0068 (2013.01); H01M 2300/0071 (2013.01); Y02E 60/12 (2013.01); Y02E 60/122 (2013.01);
Abstract

A cathode sputtering target includes: between 30 and 40 atomic % of a metal, between 2 and 10 atomic % of nitrogen, and between 35 and 50 atomic % of oxygen. The remainder up to 100% is constituted by at least one element selected from the group that comprises phosphorous (P), boron (B), silicon (Si), germanium (Ge), gallium (Ga), sulphur (S) and aluminium (Al). Also provides a method of manufacturing a thin film from the target, and an electrochemical device comprising the thin film.


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