The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Sep. 28, 2009
I-kai Lo, Kaohsiung, TW;
Chia-ho Hsieh, Kaohsiung, TW;
Yu-chi Hsu, Kaohsiung, TW;
Wen-yuan Pang, Kaohsiung, TW;
Ming-chi Chou, Kaohsiung, TW;
I-Kai Lo, Kaohsiung, TW;
Chia-Ho Hsieh, Kaohsiung, TW;
Yu-Chi Hsu, Kaohsiung, TW;
Wen-Yuan Pang, Kaohsiung, TW;
Ming-Chi Chou, Kaohsiung, TW;
National Sun Yat-Sen University, Kaohsiung, TW;
Abstract
A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlOand a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.