The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2014

Filed:

Jan. 03, 2011
Applicants:

Beom-sig Cho, Hwaseong-si, KR;

Jang-seok Choi, Seoul, KR;

Inventors:

Beom-Sig Cho, Hwaseong-si, KR;

Jang-Seok Choi, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment, a method of performing data training in a system including a memory controller and at least a first memory device including a group of memory banks is disclosed. The method includes providing a plurality of enabling states for the group of memory banks, wherein each enabling state is different and for each enabling state a set of the memory banks of the group is enabled and any remaining of the memory banks of the group are not enabled. The method further includes performing a first data training procedure that includes a series of first data training operations for the first memory device, each data training operation being performed for a different one of the plurality of enabling states, generating a noise profile based on the series of first data training operations, statistically analyzing the noise profile to select a reference enabling state of the group of memory banks, and performing a second data training procedure for the first memory device using the reference enabling state. As a result, the operating speed and reliability of the system including the memory device may be improved.


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