The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jul. 07, 2011
Yoon-ho Son, Yongin-si, KR;
Mong-sup Lee, Seoul, KR;
In-seak Hwang, Suwon-si, KR;
Dae-hyuk Chung, Seongnam-si, KR;
Suk-hun Choi, Suwon-si, KR;
Sang-jun Lee, Seoul, KR;
Yoon-Ho Son, Yongin-si, KR;
Mong-Sup Lee, Seoul, KR;
In-Seak Hwang, Suwon-si, KR;
Dae-Hyuk Chung, Seongnam-si, KR;
Suk-Hun Choi, Suwon-si, KR;
Sang-Jun Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
In a semiconductor device having an enlarged contact area between a contact structure and a substrate, the substrate may include a first region on which a conductive structure is arranged and a second region defining the first region. The first region may include a multi-faced polyhedral recess of which at least one of the sidewalls is slanted with respect to a surface of the substrate. An insulation layer may be formed on the substrate to a thickness that is sufficient to cover the conductive structure. The insulation layer has a contact hole that may be communicated with the recess. The active region of the substrate is exposed through the contact hole. A conductive pattern is positioned in the recess and the contact hole. Accordingly, the contact resistance at the active region of the substrate may be kept to a relatively low value even though the gap distances and line width of pattern lines are reduced.