The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jun. 04, 2012
Yuki Fukui, Kanagawa, JP;
Hiroaki Katou, Kanagawa, JP;
Yuki Fukui, Kanagawa, JP;
Hiroaki Katou, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
The present invention makes it possible to inhibit an SOA (Safe Operating Area) in a vertical-type bipolar transistor from narrowing. A p-type base layerincludes a first peak, a second peak, and a third peak in an impurity profile in the thickness direction. The first peak is located on the topmost surface side of a semiconductor substrate. The second peak is located closer to the bottom face side of the semiconductor substratethan the first peak and higher than the first peak. The third peak is located between the first peak and the second peak.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile