The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jan. 08, 2010
Applicants:
Tadashi Sawayama, Machida, JP;
Katsunori Hirota, Yamato, JP;
Takanori Watanabe, Yamato, JP;
Takeshi Ichikawa, Hachioji, JP;
Inventors:
Tadashi Sawayama, Machida, JP;
Katsunori Hirota, Yamato, JP;
Takanori Watanabe, Yamato, JP;
Takeshi Ichikawa, Hachioji, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.