The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Mar. 12, 2010
Michael Carroll, Jamestown, NC (US);
Daniel Charles Kerr, Oak Ridge, NC (US);
Christian Rye Iversen, Vestbjerg, DK;
Philip Mason, Greensboro, NC (US);
Julio Costa, Oak Ridge, NC (US);
Edward T. Spears, Oak Ridge, NC (US);
Michael Carroll, Jamestown, NC (US);
Daniel Charles Kerr, Oak Ridge, NC (US);
Christian Rye Iversen, Vestbjerg, DK;
Philip Mason, Greensboro, NC (US);
Julio Costa, Oak Ridge, NC (US);
Edward T. Spears, Oak Ridge, NC (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.