The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Mar. 12, 2013
Lg Innotek Co., Ltd., Seoul, KR;
Jung Hun Oh, Seoul, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
A power semiconductor device is disclosed. The power semiconductor device includes a substrate, a first semiconductor layer disposed on the substrate, a second semiconductor layer disposed on the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer and exposing a portion of the second semiconductor layer, a gate electrode disposed on the portion of the second semiconductor layer exposed via the third semiconductor layer, and a source electrode and a drain electrode disposed on the third semiconductor layer at both sides of the gate electrode to be spaced apart from each other. An electrical segregation region is formed in the third semiconductor layer between the gate electrode and the drain electrode.