The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Nov. 22, 2011
Applicant:
Sandeep Bahl, Palo Alto, CA (US);
Inventor:
Sandeep Bahl, Palo Alto, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
An enhancement-mode group III-N high electron mobility transistor (HEMT) with a reverse polarization cap is formed in a method that utilizes a reverse polarization cap structure, such as an InGaN cap structure, to deplete the two-dimensional electron gas (2DEG) and form a normally off device, and a spacer layer that lies below the reverse polarization cap structure and above the barrier layer of the HEMT which allows the reverse polarization cap layer to be etched without etching into the barrier layer.