The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jul. 13, 2012
Sung Bum Bae, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Sung Bock Kim, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Chull Won Ju, Daejeon, KR;
Sang Choon Ko, Daejeon, KR;
Jong-won Lim, Daejeon, KR;
Ho Kyun Ahn, Daejeon, KR;
Woo Jin Chang, Daejeon, KR;
Young Rak Park, Daejeon, KR;
Sung Bum Bae, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Sung Bock Kim, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Chull Won Ju, Daejeon, KR;
Sang Choon Ko, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Ho Kyun Ahn, Daejeon, KR;
Woo Jin Chang, Daejeon, KR;
Young Rak Park, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.