The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2014

Filed:

Sep. 09, 2011
Applicants:

Grigory Onushkin, Gyunggi-do, KR;

Oleg Ledyaev, Gyunggi-do, KR;

Jong Hoon Lim, Gyunggi-do, KR;

Joong Kon Son, Seoul, KR;

Pun Jae Choi, Gyunggi-do, KR;

Inventors:

Grigory Onushkin, Gyunggi-do, KR;

Oleg Ledyaev, Gyunggi-do, KR;

Jong Hoon Lim, Gyunggi-do, KR;

Joong Kon Son, Seoul, KR;

Pun Jae Choi, Gyunggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.


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