The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Nov. 29, 2012
Ki-ju Im, Yongin, KR;
Hui-won Yang, Yongin, KR;
Min-kyu Kim, Yongin, KR;
Jong-han Jeong, Yongin, KR;
Kwang-suk Kim, Yongin, KR;
Ki-Ju Im, Yongin, KR;
Hui-Won Yang, Yongin, KR;
Min-Kyu Kim, Yongin, KR;
Jong-Han Jeong, Yongin, KR;
Kwang-Suk Kim, Yongin, KR;
Samsung Display Co., Ltd., Yongin, Gyunggi-do, KR;
Abstract
A thin film transistor includes a gate electrode having a first length measured in a first direction and a first width measured in a second direction, an active layer having a second length measured in the first direction and a second width measured in the second direction, the second length of the active layer being greater than the first length of the gate electrode, and the second width of the active layer being greater than the first width of the gate electrode, and a source electrode and a drain electrode that are connected to the active layer, wherein at least one of opposite side edges of the gate electrode extending in the first direction is spaced apart from a corresponding opposite side edge of the active layer extending in the first direction.