The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2014

Filed:

Feb. 07, 2012
Applicants:

Jung Hun Jang, Seoul, KR;

Jeong Sik Lee, Seoul, KR;

Jeong Soon Yim, Seoul, KR;

Byeoung JO Kim, Seoul, KR;

Seung Keun Nam, Seoul, KR;

Inventors:

Jung Hun Jang, Seoul, KR;

Jeong Sik Lee, Seoul, KR;

Jeong Soon Yim, Seoul, KR;

Byeoung Jo Kim, Seoul, KR;

Seung Keun Nam, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively.


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