The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Sep. 15, 2011
Takeshi Yamada, Hamamatsu, JP;
Masaharu Hoshikawa, Hamamatsu, JP;
Yasunaga Nara, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A plurality of modified parts are formed at a first formation pitch for a line arranged along the M-plane of a single-crystal sapphire substrate to construct a modified region and cause a fracture occurring from the modified region to reach a principal surface of the single-crystal sapphire substrate. A plurality of modified parts are formed at a second formation pitch narrower than the first formation pitch for a line arranged along the A-plane of the single-crystal sapphire substrate to construct a modified region and cause a fracture occurring from the modified region to reach the principal surface of the single-crystal sapphire substrate. Along the lines, a knife edge is pressed against a wafer from the side of the single-crystal sapphire substrate opposite from the principal surface of the single-crystal sapphire substrate where the fractures have reached, to cut the wafer along the lines.