The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Dec. 23, 2009
Steffen Reymann, Erfurt, DE;
Gerhard Fiehne, Grossrudestedt, DE;
Uwe Eckoldt, Hohenfelden, DE;
X-Fab Semiconductor Foundries AG, Erfurt, DE;
Abstract
The invention relates to production of alignment marks on a semiconductor wafer with the use of a light-opaque layer (), wherein, before the light-opaque layer () is applied, by means of the etching of cavities, free-standing pillar groups are produced in the cavities and then the light-opaque layer () is applied. The pillars are produced with a height of above 1 μm, which, moreover, is greater than a thickness of the light-opaque layer () to be applied in the cavities as layer portions (). The cavities are formed with a width such that they are filled only partly with the layer portions () when the light-opaque layer () is applied. The high, freely positioned alignment marks produced by the method as pillar series (), having a plurality of individual pillars (') in a cavity (), of a scribing trench on the semiconductor wafer are likewise described.