The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jan. 08, 2010
Sarunya Bangsaruntip, Yorktown Heights, NY (US);
Steven J. Koester, Yorktown Heights, NY (US);
Amlan Majumdar, Yorktown Heights, NY (US);
Jeffrey W. Sleights, Yorktown Heights, NY (US);
Sarunya Bangsaruntip, Yorktown Heights, NY (US);
Steven J. Koester, Yorktown Heights, NY (US);
Amlan Majumdar, Yorktown Heights, NY (US);
Jeffrey W. Sleights, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a nanowire tunnel device includes forming a nanowire suspended by a first pad region and a second pad region over a semiconductor substrate, forming a gate structure around a channel region of the nanowire, implanting a first type of ions at a first oblique angle in a first portion of the nanowire and the first pad region, and implanting a second type of ions at a second oblique angle in a second portion of the nanowire and the second pad region.