The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2014

Filed:

Nov. 12, 2012
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Kenichi Kazama, Nagano, JP;

Tsunehiro Nakajima, Nagano, JP;

Koji Sasaki, Nagano, JP;

Akio Shimizu, Nagano, JP;

Takashi Hayashi, Nagano, JP;

Hiroki Wakimoto, Nagano, JP;

Assignee:

Fuji Electric Co., Ltd., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device, including a silicon substrate having a first major surface and a second major surface, a front surface device structure formed in a region of the first major surface, and a rear electrode formed in a region of the second major surface. The rear electrode includes, as a first layer thereof, an aluminum silicon film that is formed by evaporating or sputtering aluminum-silicon onto the second major surface, the aluminum silicon film having a silicon concentration of at least 2 percent by weight and a thickness of less than 0.3 μm.


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