The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jan. 14, 2008
Michael Lisiansky, Migdal Haemek, IL;
Yakov Roizin, Migdal Haemek, IL;
Alexey Heiman, Migdal Haemek, IL;
Amos Fenigstein, Migdal Haemek, IL;
Michael Lisiansky, Migdal Haemek, IL;
Yakov Roizin, Migdal Haemek, IL;
Alexey Heiman, Migdal Haemek, IL;
Amos Fenigstein, Migdal Haemek, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A method for improving the reliability of a high-k dielectric layer or a high-k dielectric stack by forming an amorphous high-k dielectric layer over an insulating layer, doping the amorphous high-k dielectric layer with nitrogen atoms, and subsequently heating the resulting structure at a temperature greater than or equal to the crystallization temperature of the high-k dielectric material, thereby transforming the high-k dielectric material from an amorphous state to a crystalline state, and causing nitrogen atoms to diffuse into the insulating layer.