The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Sep. 25, 2010
Zhizhen YE, Hangzhou, CN;
Yangfan LU, Hangzhou, CN;
Kewei Wu, Hangzhou, CN;
Jingyun Huang, Hangzhou, CN;
Qikuo YE, Hangzhou, CN;
Zhizhen Ye, Hangzhou, CN;
Yangfan Lu, Hangzhou, CN;
Kewei Wu, Hangzhou, CN;
Jingyun Huang, Hangzhou, CN;
Qikuo Ye, Hangzhou, CN;
Abstract
The embodiments disclosed a method for preparing a p-type ZnO-based material, the method conducted in a metal organic chemical vapor deposition (MOCVD) system, including cleaning a surface of a substrate and placing the substrate in a growth chamber of the metal organic chemical vapor deposition system, vacuumizing the growth chamber to 10-10Pa, heating the substrate to 200-700° C., introducing an organic Zn source, an organic Na source and oxygen, and depositing the p-type ZnO-based material on the substrate. Na-doping is capable of greatly improving hole concentration and p-type stability in the ZnO-based material, and use of Na-doping technology in combination with MOCVD equipment provides a p-type ZnO-based material having excellent crystal quality and electrical and optical qualities.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile