The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jan. 21, 2010
Applicants:
Rakesh Agrawal, West Lafayette, IN (US);
Hugh Hillhouse, Seattle, WA (US);
Qijie Guo, West Lafayette, IN (US);
Inventors:
Rakesh Agrawal, West Lafayette, IN (US);
Hugh Hillhouse, Seattle, WA (US);
Qijie Guo, West Lafayette, IN (US);
Assignee:
Purdue Research Foundation, West Lafayette, IN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS, CuIn(S,Se), CuGaS, CuGa(S, Se), Cu(InGa)S, and Cu(InGa)(S, Se)nanoparticles and combinations thereof, wherein 0≦x≦1 and 0≦y≦1.