The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2014

Filed:

Jun. 06, 2012
Applicants:

Shaoher X. Pan, San Jose, CA (US);

Jay Chen, Saratoga, CA (US);

Inventors:

Shaoher X. Pan, San Jose, CA (US);

Jay Chen, Saratoga, CA (US);

Assignee:

SiPhoton Inc., Palo Alto, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.


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