The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Jan. 19, 2010
Woojin Kim, Yongin-si, KR;
Jangeun Lee, Suwon-si, KR;
Sechung OH, Suwon-si, KR;
Kyungtae Nam, Suwon-si, KR;
Dae Kyom Kim, Daejeon, KR;
Junho Jeong, Suwon-si, KR;
Woojin Kim, Yongin-si, KR;
Jangeun Lee, Suwon-si, KR;
Sechung Oh, Suwon-si, KR;
KyungTae Nam, Suwon-si, KR;
Dae Kyom Kim, Daejeon, KR;
Junho Jeong, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.