The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Dec. 28, 2009
Yukinaga Azuma, Tokyo, JP;
Masaki Morikawa, Akita, JP;
Yukinaga Azuma, Tokyo, JP;
Masaki Morikawa, Akita, JP;
Japan Super Quartz Corporation, Akita, JP;
Abstract
A method for manufacturing a silicon single crystal is provided including producing a silicon melt in a chamber by melting a silicon raw material loaded into a silica glass crucible under a reduced pressure and high temperature, removing gas bubbles from within the silicon melt by rapidly changing at least the pressure or temperature within the chamber, and pulling up the silicon single crystal from the silicon melt after the gas bubbles are removed. When the pressure is rapidly changed, the pressure within the chamber is rapidly changed at a predetermined change ratio. In addition, when the temperature is rapidly changed, the temperature within the chamber is rapidly changed at a predetermined change ratio. In this way, Ar gas attached to an inner surface of the crucible and h is the cause of the generation of SiO gas is removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile