The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2014
Filed:
Oct. 18, 2010
Gu-gon Park, Daejeon, KR;
Minjin Kim, Daejeon, KR;
Young-jun Sohn, Daejeon, KR;
Young-woo Choi, Cheongju-si, KR;
Seok-hee Park, Daejeon, KR;
Sung-dae Yim, Daejeon, KR;
Tae-hyun Yang, Daejeon, KR;
Young-gi Yoon, Daejeon, KR;
Won-yong Lee, Daejeon, KR;
Chang-soo Kim, Incheon, KR;
Gu-Gon Park, Daejeon, KR;
Minjin Kim, Daejeon, KR;
Young-Jun Sohn, Daejeon, KR;
Young-Woo Choi, Cheongju-si, KR;
Seok-Hee Park, Daejeon, KR;
Sung-Dae Yim, Daejeon, KR;
Tae-Hyun Yang, Daejeon, KR;
Young-Gi Yoon, Daejeon, KR;
Won-Yong Lee, Daejeon, KR;
Chang-Soo Kim, Incheon, KR;
Korea Institute of Energy Research, Daejeon, KR;
Abstract
A quality control apparatus for a gas diffusion layer includes a support, at least one first pressure device, a plate provided below the first pressure device and supporting the pressure applied to the gas diffusion layer sample, a first controller controlling the compression of the first pressure device, a thickness gauge measuring the thickness of the gas diffusion layer sample, a flow channel formed in the sample compressing portion to discharge a gas to the gas diffusion layer sample, a gas supply controller, a gas supply source, a pressure gauge, two fixing devices, a third controller controlling the compression of the fixing devices, two second pressure, a second controller controlling the compression of the second pressure device, a stopper, a protrusion, and a load cell.