The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Jun. 10, 2010
Haruhiro Funakoshi, Hamamatsu, JP;
Shinya Ito, Hamamatsu, JP;
Haruhiro Funakoshi, Hamamatsu, JP;
Shinya Ito, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A photodetecting deviceincludes a photodiode PD and an integrating circuit. The integrating circuitincludes an amplifier circuit, a capacitive element C, and a second switch SW. The amplifier circuithas a driving section including a PMOS transistor Tand an NMOS transistor T, the respective drain terminals thereof being connected to each other. A first switch SWcomprising a PMOS transistor Tis opened or closed according to the level of a first reset signal Resetinput to the gate terminal. When the first reset signal Resetis at a low level, the first switch SWis closed to apply a power supply potential VDD to the gate terminal of the PMOS transistor T, thereby turning off the PMOS transistor T. Thus, an amplifier circuit, an integrating circuit and a photodetecting device capable of achieving both low power consumption and high speed can be realized.