The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Sep. 11, 2012
Syotaro Ono, Hyogo-ken, JP;
Masaru Izumisawa, Hyogo-ken, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Hiroaki Yamashita, Hyogo-ken, JP;
Syotaro Ono, Hyogo-ken, JP;
Masaru Izumisawa, Hyogo-ken, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Hiroaki Yamashita, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.