The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
May. 24, 2012
Noriaki Mikasa, Tokyo, JP;
Noriaki Mikasa, Tokyo, JP;
Other;
Abstract
A semiconductor device includes a semiconductor substrate having a first gate groove having first and second sides opposite to each other; a first diffusion region underneath the first gate groove; a second diffusion region in the semiconductor substrate, the second diffusion region covering an upper portion of the first side of the first gate groove; and a third diffusion region in the semiconductor substrate. The third diffusion region covers the second side of the first gate groove. The third diffusion region is coupled to the first diffusion region. The third diffusion region has a bottom which is deeper than a bottom of the first gate groove. The bottom of the third diffusion region is different in level from the bottom of the first diffusion region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile